This is especially important for high-bandwidth memory (HBM), which is acting as the frontier architecture for proving out 3D manufacturing and testing strategies. But testing HBM faces tremendous challenges due to its complex structure, which becomes considerably harder with each device generation. With each new generation of HBM, TSVs become more closely spaced, introducing more potential for failure. However, given the tiny size of the TSV in HBM relative to probe needles (around 35µm), only TSV test structures can be contacted. After programming, a memory repair operation can be initiated, allowing the HBM to reconfigure itself to bypass the faulty elements, improving yield and reliability.”