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Ultrafast X-Ray Diffraction Maps Thermal Transport In GaN Thin Films (MIT, SLAC, Stanford, Argonne)
['Technical Paper Link', 'Tom Katsioulas', 'Alex', 'Matt Bailey', 'Alexis R. Ware', 'Yağız Boz', 'Murugavel Ganesan', 'F. Chen', 'B.S. Deepaksubramanyan', 'Brian Bailey']
Semiconductor Engineering
Researchers from MIT, SLAC, Stanford University, and Argonne National Laboratory published a technical paper titled “Spatiotemporal mapping of anisotropic thermal transport in GaN thin films via ultrafast X-ray diffraction.”
Abstract Excerpt: The paper presents a “non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane thermal conductivity and thermal boundary conductance, using GaN thin films on silicon as a model system.”
Find the technical paper here.
MIT’s news summary on the research is here.
“Spatiotemporal Mapping of Anisotropic Thermal Transport in GaN Thin Films via Ultrafast X-Ray Diffraction.”