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Samsung debuts three next-generation memory technologies for AI data centers — zHBM, zNAND-O, and BV-NAND all rely on advanced wafer bonding technologies
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zHBM : Samsung’s vision for custom HBM ultra-high-performance memory that will sit on top of logic dies.
zNAND-O : NAND memory that can be bonded atop a logic device to maximize bandwidth, reduce latency, and minimize power consumption.
: NAND memory that can be bonded atop a logic device to maximize bandwidth, reduce latency, and minimize power consumption.
21.0 Gb mm^2 20 mm^2 >20 Gb mm^2 19.8 Gb mm^2 Architecture TLC TLC QLC TLC QLC TLC TLC TLC QLC Die Capacity 1 Tb 1 Tb ?
1 Tb 2 Tb 1 Tb 1 Tb 1 Tb 1 Tb I/O Speed Up to 5600 MT/s Up to 3200 MT/s Up to 4800 MT/s Up to 4800 MT/s Up to 3600 MT/s Up to 3600 MT/s ?