Samsung Electronics recently announced that it’s latest AI memory technology can deliver eight-times the performance of its previous generation. It stated zHBM is designed for advanced AI computing, presenting a new architecture which vertically stacks high bandwidth memory directly above AI accelerators, “moving beyond conventional designs in which HBM is positioned alongside the processor”. Samsung explained a next-generation interface system incorporating zHBM is expected to deliver an eightfold performance uplift over HBM5. With next-generation wafer bonding technology, it can deliver more than 10-times the memory density of HBM5 while enhancing energy efficiency threefold and reducing thermal resistance by more than half. It also apparently supports customer-specific designs, enabling customised IP to be integrated into “the interlayer between the memory and AI accelerator to expand memory capacity and enhance accelerator performance”.