Now, researchers have developed a new way to turn a normally insulating material into a high-performance semiconductor, opening the door to more durable and energy-efficient electronic devices. The breakthrough was made by scientists from Carnegie Mellon University and Penn State University and published in the journal Communications Materials. Many metal oxides are attractive for use in electronics because they are inexpensive, stable and can withstand harsh environments. Metal oxides are generally much more resistant to heat, corrosion and harsh environmental conditions than many traditional semiconductor materials. Instead of searching for rare compounds with the perfect properties, scientists may be able to engineer common, abundant materials into high-performance semiconductors simply by carefully mixing multiple elements together.