Samsung is showcasing a great variety of memory and storage technologies at its booth at the Future of Memory and Storage (FMS) 2026 event in Santa Clara, California. Thirteen years after it introduced the first V-NAND technology, Samsung is the first to unveil V10 of BV-NAND (Bonded V-NAND). However, Samsung also has a proprietary solution called zHBM, which promises approximately eight times the performance of HBM5. Samsung also introduced zNAND-O, a next-generation flash memory built on its V-NAND technology. The keynote laid out Samsung’s ideas on how to maximize AI system performance and power efficiency.