In brief: Samsung is adding a new set of memory technologies to its AI strategy, using wafer bonding and 3D stacking to push bandwidth, density, and energy efficiency beyond what current high-bandwidth memory and NAND technologies can deliver. A key part of that strategy is zHBM, a new way of arranging high-bandwidth memory. That puts zNAND-O somewhere between traditional mass-storage NAND and memory products designed specifically for fast inference and local processing. Samsung said V10 BV-NAND boosts memory density by about 58% compared with its V9 generation. It also improves read, write, and input/output performance over V9, targeting high-performance, high-capacity NAND for future AI systems and applications.