Samsung continues to expand its AI memory portfolio with new innovations. At the ongoing Future of Memory and Storage (FMS) 2026, the company showcased its next-gen 3D memory solutions for future AI infrastructure. Samsung’s 3D memory innovations for the AI EraDuring the event, Samsung’s Memory Business executives delivered a keynote titled “Driving the Wave of AI Revolution: 3D Innovations in Memory & Storage Architecture.” Built on the company’s V-NAND technology, zNAND-O improves storage performance with higher I/O speeds, lower latency, and greater space efficiency. Apart from these technologies, Samsung showcased its AI memory roadmap, including HBM4E, HBM5, LPDDR5X-PIM, and PM1763 enterprise storage solutions.