Alongside the zHBM concept, Samsung Electronics unveiled its V10 BV-NAND storage chip at the Future of Memory and Storage (FMS) 2026 expo today. It uses the company's 10th-generation vertical NAND flash memory architecture and represents a major technical upgrade over previous-generation NAND flash chips. V10 BV-NAND uses a new wafer-bonding technology, making Samsung the first company in the industry to introduce this type of architecture. The technology allows the company to stack more than 400 layers, resulting in around 58% higher memory density than its ninth-generation (V9) NAND flash chips. Samsung Electronics Design mockup of Samsung's V10 BV-NAND chip at the Future Memory and Storage 2026 expo