Alongside its groundbreaking V10 BV-NAND flash and zHBM memory concepts, Samsung showcased several other advanced memory and storage solutions for future AI data centers. These products aim to deliver faster performance and improved power efficiency, enabling faster AI processing. zNAND-O is Samsung's newest high-performance 3D NAND flash memory concept, designed specifically for edge AI computing. It is being developed in four-layer and eight-layer versions and aims to deliver lower latency and higher data-transfer speeds than current NAND flash chips. Samsung also showcased its LPDDR5X-PIM memory chip, which it calls the industry's first LPDDR memory with built-in data processing.