Samsung has outlined a new AI-memory roadmap led by V10 Bonding V-NAND and two conceptual architectures named zHBM and zNAND-O. V10 BV-NAND contains more than 400 active layers and separates the memory array from its peripheral logic before bonding the wafers together. Samsung says this structure raises storage density by approximately 58% over V9 NAND while improving read, write and interface performance. The zHBM concept is more speculative, but it demonstrates how aggressively memory suppliers are redesigning packaging around AI accelerators. Samsung development Announced detail V10 BV-NAND More than 400 layers Density improvement Approximately 58% versus V9 Architecture Wafer-bonded memory and peripheral logic zHBM performance target Approximately 8× HBM5 zHBM density target More than 10× HBM5 zNAND-O configurations Four and eight layers in developmentSource: Reuters