Kioxia is sampling UFS 5.0 NAND in 1 TB and 512 GB capacities and plans mass production by the end of the year. Built on the JEDEC UFS 5.0 standard, KIOXIA’s new devices leverage the MIPI M-PHY v6.0 physical layer and UniPro v3.0 protocol, including HS-Gear6 operation, to support theoretical interface speeds of up to 46.6 Gb/s per lane and approximately 10.8 GB/s of effective dual-lane read/write performance. Until now, UFS read performance has been a limiting factor for increasingly sophisticated on-device AI, constraining how quickly large language models and other AI workloads can access data. KIOXIA UFS 5.0 helps remove these bottlenecks. KIOXIA UFS 5.0 solutions combine an in-house developed UFS 5.0 controller with KIOXIA BiCS FLASH generation 8 3D flash memory, to deliver:Sequential read performance of up to 10 GB/s(3)Sequential write performance of up to 9.0 GB/s(4)Enhanced power efficiency compared to the previous generation(2)Enhanced thermal managementCompact 7.5 × 13 mm BGA package, smaller than the previous-generation product(2)Available in 1 TB and 512 GB capacitiesSee all our Memory content.