AOS highlighted the fact that AmpStack tackles one of the constant problems in power conversion: parasitic inductance. By integrating both sides of the half-bridge in one package, the vertically stacked MOSFET can reduce parasitic inductance usually on the PCB. AOS also improved the clip design for the switch node connecting the two MOSFETs, reducing inductance not only outside the package, but inside it as well. Wilson said the vertically stacked half-bridge is not only a boost for power density, but also for reliability and robustness. “By designing the package with low source parasitic inductance, we've drastically reduced phase-node ringing and MOSFET stress,” said Wilson.