Due to the high energy of these photons, conventional photoresist materials will not work. New materials are needed to build added layers on a 3D chip without disturbing the existing circuits. Hsu said using indium-containing materials for the EUV photoresist and the transistors should lead to more efficiency by eliminating a step in integrated circuit manufacturing that involves solvents. Hsu’s preliminary work on indium-containing materials as an EUV photoresist has been supported by a Semiconductor Research Corporation (SRC) grant to investigate new semiconductor materials. “We will bring computation and synthetic chemistry to expand beyond currently commercially available materials.”Hsu’s co-principal investigators include Dr. Cormac Toher, assistant professor of materials science and engineering and a computational materials scientist, and Dr. Kevin Brenner, assistant professor of materials science and engineering.