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Impact Of The Film Transfer And Grain Size On The Cu-barrier Properties Of 2D WS2 Films (NUS et al.)
['Technical Paper Link', 'Sf Fiber Techs', 'Dr. Dev Gupta', 'Mikko Utriainen', 'Raymond Doerr', 'Hoyong Lee', 'Js Paek', 'Larry K', 'Linda Christensen', 'David Muncier']
Semiconductor Engineering
A new technical paper titled “Enhancing Cu-barrier properties of 2D-WS 2 barriers: The role of grain size and surface passivation” was published by researchers at National University of Singapore, AIXTRON, IMiF and Applied Materials.
Abstract“Two-dimensional (2D) films, such as tungsten disulfide (WS 2 ), are being considered by the microelectronics industry as promising barrier and liner systems for the back-end-of-line (BEOL) metal interconnects.
To maximize their efficiency, processes to integrate large grain size 2D barriers in BEOL should be explored.
In this work, we investigate the use of large grain WS 2 films, which are obtained by the epitaxy of the 2D film on sapphire substrates and then transferred into the dielectric.
After demonstrating that a hydrogen disulfide passivation technique can help overcome film transfer challenges, we show that large grain size 2D films have enhanced barrier efficiency.