This poses challenges in high-temperature applications in semiconductor processing and enhancing the heat resistance of PSAs has been achieved through chemical crosslinking. Now, PSAs were developed that maintain adhesion during thermal treatment and reduce adhesion after photo treatment, allowing easy separation from silicon wafers. after thermal treatment. This decrease is attributed to increased crosslinking density through AN cyclisation during the thermal treatment unlike conventional PSA which is inseparable after thermal treatment. As the researchers point out, their results provide valuable insights for engineering PSAs with controlled adhesion characteristics, thereby enabling the development of advanced PSAs suited for semiconductor industry applications.